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| EPA680AV-180F ISSUED 05/02/2006 High Efficiency Heterojunction Power FET FEATURES * * * * * * Non-Hermetic 180mil Metal Flange Package +36.5 dBm Typical Output Power 17.5 dB Typical Power Gain at 2GHz 0.4 x 6800 Micron Recessed "Mushroom" Gate Si3N4 Passivation Advanced Epitaxial Heterojunction Profile Provides Extra High Power Efficiency and High Reliability ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB PAE IDSS GM VP BVGD BVGS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 2GHz f = 4GHz VDS = 8 V, IDS 50% IDSS Gain at 1dB Compression f = 2GHz f = 4GHz VDS = 8 V, IDS 50% IDSS Power Added Efficiency at 1dB Compression f = 2GHz VDS = 8 V, IDS 50% IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V Transconductance Pinch-off Voltage Drain Breakdown Voltage Source Breakdown Voltage Thermal Resistance VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA IGD = 6.8 mA IGS = 6.8 mA Caution! ESD sensitive device. MIN 35.0 16.0 TYP 36.5 36.5 17.5 12.5 45 1250 1360 -13 -7 2050 2150 -1.0 -15 -14 7* o MAX UNITS dBm dB % 2690 -2.5 mA mS V V V C/W * Overall Rth depends on case mounting. MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Igsf Igsr Pin Tch Tstg Pt PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reversed Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 12V -5V 30.6 mA -5.1 mA 33.5 dBm 175oC -65/175oC 21 W CONTINUOUS2 8V -3V 10.2 mA -1.7 mA @ 3dB Compression 175oC -65/175oC 21 W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 1 Revised May 2006 |
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